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The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2002 On-line Digest Table of Contents

Order everything you need with our convenient on-line order form
or contact Margaret Doyle at mdoyle@gaasmantech.org

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1a	2002: The Market in Transition	Abstract
	Earl Lum. CIBC
1b	Overview of Emerging Compound Semiconducator Technologies	Abstract N/A
	Keith Buchanan, Trikon Technologies
1c	The Evolution of Interconnect Technology for Silicon Integrated Circuitry	Abstract
	Keith Buchanan, Trikon Technologies
2a	Development of Circuits in Indium Phosphide for Communication at 40Gbit/s and Above	Abstract
	Alan D. Huelsman, Vitesse Semiconductor
2b	InP and GaAs Components for 40 Gbps Applications	Abstract
	Mansoor Siddiqui, Greg Chao, Aaron Ohi, Augusto Guitierrez-Airken, Barry A;llen, Alex Chau, Wendell Beall, Matt D'Amore, Bret Oyama, Dennis Hall,
	Richard Lai and Dwight Streit, Velocium
2c	Performance of InP/InGaAs Heterojunction Bipolar Transistors for 40 Gb/s OEICApplications	Abstract
	Shyh-Chiang Shen, David C. Caruth & Milton Feng, Xindium Technologies & University of Illinois
2d	Manufacturable Commercial 4-inch InP HBT Device Technology	Abstract
	N. X. Nguyen, J. Fierro, G. Peng, A. Ly, and C. Nguyen, GCS
2e	A Non-Self Aligned InP HBT Production Process	Abstract
	Mike Sun, Juntao Hu, Wu-Jing Ho, Gary Hu, Jiang Li, Vicki Weng, Wei-Ming Xu, June Nguyen, Chang-Hwang Hua and Ding Day, Alpha Industries
3a	Accelerated Reliability Testing of GaAs/InGaP HBTs	Abstract
	Bob Surridge, Jeff Law, Brian Oliver, Wojciech Pakulski, Heidi Strackholder, Michel Abou-Khalil and Guy Bonneville, Nortel Networks Optical Components
3b	Wafer-Level Reliability Tests of InGaP HBTs Using High Current Stress	Abstract
	Frank H.F. Chau, Chien-Ping Lee, Clarence Dunnrowicz and Barry Lin, EiC Corporation
3c	Failure analysis of electrostatic discharge in InGaAs/AlGaAs PHEMTs	Abstract N/A
	Chiharu Nozaki, Masanori Ochi, Yoshitomo Sagae, Takao Noda, Yoshiaki Kitaura, Toshiba
3d	A Power Law Model for Assessment of Hot Electron Reliability in GaAs MESFETs and AlGaAs/InGaAs pHEMTs	Abstract
	Val Kaper, Peter Ersland, M/A – COM
3e	Reliability Study of Low-Voltage RF MEMS Switches	Abstract
	D. Becher, R. Chan, M. Hattendorf, M. Feng, Univ. of Illinois
4a	2nd Generation Device Modeling for MMIC Design and Manufacturability	Abstract
	R. Tsai, M. Nishimoto, W. Akiyama, J. Chang, D. Ko, A. Schiaroli, R. To, L. Tran, M. Truong, K.H. Yen, and R. Lai, TRW
4b	New method to monitor the frequency-dispersion in InGaAs/AlGaAs PHEMTs	Abstract
	T. Izumi, T. Ohshima, M. Tsunotani and T. Kimura, Oki Electric
4c	Nondestructive Characterization of epitaxial structure for High Electron Mobility Transistors	Abs tract
	Mikhail K Mikhov, Eric S. Johnson, Celicia Della, Brian J.Skromme, Ellen Lan, Mark Rittgers, Mike Pelczynski, Motorola & Arizona State Univ.
4d	Contactless Electron Mobility Evaluation of Semi-Insulating GaAs and InP Wafers	Abstract
	Rudolf Stibal, Ulrich Kretzer and Wolfgang Jantz, Fraunhofer Institut & Freiberger
4e	6 Inch GaAs Fab Conversion Cost Effectiveness Evaluation Process	Abstract
	Ariel Meyuhas, MAX International
5a	Dielectrically defined optical T-gate for high power GaAs pHEMT	Abstract
	D. Fanning, L. Witkowski, J. Stidham, H.-Q. Tserng, M. Muir & P. Saunier, TriQuint Semiconductors
5b	Effect of Intentional Surface Oxidization on Power Performance in Planer Type AlGaAs/GaAs MESFET	Abstract
	T. Kagiyama, Y. Saito, K. Otobe, S. Nakajima, Sumitomo Electric.
5c	Novel Nitride Passivation on 0.15um Pseudomorphic GaAs HEMTs Using High-Density Inductively Coupled Plasma CVD (HD-ICVD)	Abstract
	Y.C. Chou, R.Lai, C.P.Li, Peter Nam, H.K. Kim, Y. Ra, R. Grundbacher, E. Alers, M. Barsky, M. Biedenbender, A. Oki, TRW., Bethel Materials Research & UC, Irvine.
5d	Damage Free Etching for Gate Process of GaAs MESFET by ICP Method	Abstract
	Y. Tosaka, S. Nakajima, Sumitomo Electric
5e	A highly Uniform and High Throughput, Double Selective pHEMT Process Using an All Wet Etch Chemistry	Abstract
	Kamal Alavi, Serap Ogut, Peter Lyman, William Hoke, Mike Borkowski, Raytheon RF Components Company
6a	Benefits and Challenges in Decreasing GaAs Through Substrate Via Size and Die Thickness	Abstract
	Henry Hendriks, Allen Hanson, Thomas Lepkowski, Anthony Quaglietta, Bharat Patel, M/A - COM: Tyco Electronics
6b	A New Alternative for Temporary Wafer Mounting	Abstract
	David J. Mould, John C. Moore, Motorola & General Chemical Corporation
6c	Capability and Cycle Time Improvements in Nortel Network’s Substrate Via Fab	Abstract
	D. Bonneau, P. Borkowski, R. Shelley, A. Fortier, M. C. Young, C. Fragos, S. Anderson, Nortel Networks Optical Components & Trikon Technologies Ltd.
6d	Through Substrate Via Etching and Cleaning for High Volume Production Demands	Abstract
	Keri L. Costello, Carolina S. Rios-Wasson, Terry K. Daly, John C. Moore, Motorola & General Chemical Corporation
6e	Characterization of a Manufacturable High Rate GaAs Via Etch Process	Abstract
	F. Clayton, R. Westerman, and D. Johnson, Unaxis USA, Inc. & Motorola InC.
7a	Implanted MESFETs – Still Going Strong	Abstract
	Martin J. Brophy, Richard L. Campbell and William Davenport, TriQuint Semiconductors
7b	Manufacturable GaAs High Power FET for W-CDMA Base Station	Abstract
	E. Mitani, H. Takahashi, H. Haematsu, K. Inoue, K. Ebihara and J. Fukaya, Fujitsu
7c	Wide Bandgap Semiconductors: Moving from Research to Production	Abstract
	John Zolper, DARPA/MTO
7d	GaAs pHEMT Technology for Optical Communication System	Abstract
	Tamotsu Kimura, Tomoyuki Ohshima, Masanori Tsunotani, Toshikiko Ichioka and Shohei Seki, Oki Electric Industry
7e	Manufacturable 0.15 um PHEMT Process for High Volume and Low Cost on 6” GaAs Substrates: The First 0.15 um PHEMT 6”GaAs Foundry Fab	Abstract
	M. Chertouk, D. W. Tu, P. Meng, C. G. Yuan, W. D. Chang, C. Y. Kuo, C. C. Chang, A. Chang, H. H. Chen, P. C. Chao, WIN Semiconductors
8a	Silicon Nitride MIM Capacitor Reliability for Multiple Dielectric Thickness	Abstract
	John Beall, Ken Decker, Keith Salzman, and Gergana Drandova, TriQuint Seiconductors
8b	Polarization Behavior of GaAs in Electrolyte Solutions	Abstract
	Y. Huang, J.L. Luo, D.G. Ivey, University of Alberta
8c	Multipulse Electroplating of Au/Sn Alloys onto Patterned Wafers for Packaging Applications	Abstract
	A.He, D.G. Ivey, S. Akhlaghi, University of Alberta
8d	Using Neural Networks for RHEED Modeling of Interfaces in AlGaSb-InAs HEMT Devices	Abstract
	Gregory E. Triplett, Gary S. May, April S. Brown, Georgia Institute of Technology
8e	Prediction of Maximum Temperature Rise in Multi-Finger Transistor Structures using Normalization	Abstract
	David J. Walkey, Dritan Celo, Tom J. Smy, Carleton University
8f	Moiré Interferometry for Microelectronics Packaging Interface Fatigue Reliability	Abstract
	Heng Liu, A.N. Cartwright, Cemal Basaran, University of Buffalo
8g	Ultrafast Spectroscopy of InGaN Quantum Wells for the Development of Efficient Emitters	Abstract
	Fei Chen, M.C. Cheung, A.N. Cartwright, Paul M. Sweeney, Jeffrey S. Flynn & David Keogh, University of Buffalo & ATMI Inc.
8h	Active Laser Device Characterization by Scanning Capacitance Microscopy	Abstract
	M. W. Xu, N. Duhayon, W. Vandervorst, Catholic Univ. of Leuven. IMec
8i	Direct Observation of Gain Collapse Phenomena in Multi-Finger HBTs Using Digital Cameras	Abstract
	Toru Sugiyama, Yorito Kakiuchi, Kouhei Morizuka, Yoshiaki Kitaura, Toshiba Corp
8j	Characterization of Electrochemically Deposited Gold for Back-Side Processing of GaAs Wafers	Abstract
	Erik Young, Henry Hendriks, Gabriel Rojano, Rajesh Baskaren, Tom Ritzdorf, John Klocke, Semitool Inc. & M/A-Com: Tyco Electronics
8k	Cutting GaAs Devices Without Blade Dressing	Abstract
	Zi Qing (Tony) Wang, Motorola
8l	In-line Optical and X-ray Measurements of Thickness and Composition for Manufacturing of Heterostructure Bipolar Transistors	Abstract
	Stefan Zollner, Mariam G. Sadaka, N.V. Edwards, Candi S. Cook, Q. Xie, Ha T. Le, Jill Hildreth, and Andrew S.Morton, Motorola
8m	In-Situ Optical Thickness Control of Ion Beam Deposited Coatings for the Telecommunications Industry	Abstract
	Adrian J. Devasahayam, Ivo Agatic, Adrian Celaru, Warren Cheesman, Boris Druz, Roger Fremgen and Hari Hegde, Veeco Instruments
8n	Simple Process for 0.5um Lift-off Applications in the GaAs and MEMS Industries	Abstract
	Medhat Toukhy, Salem Mullen, Ping-Hung Lu, Gregg Espin, Jeff Griffin. David Maurer, Clariant Corporation & Motorola
10a	III-V MOVPE for RF power applications	Abstract
	Peter Frijlink, OMMIC
10b	High Performance AlGaN/GaN HEMTs on Semi-Insulating SiC Substrates Grown by Metalorganic Chemical Vapor Deposition	Abstract
	Michael M. Wong, Delphine Sicault, Uttiya Chowdhury, Jonathan C. Denyszyn, Ting Gang Zhu and Russell D. Dupuis and David T. Becker & Milton Feng, University of Texas & The University of Illinois
10c	4" InP based HEMT epitaxial wafers grown by MOVPE for volume production	Abstract
	Hajime Momoi, Koji Kakuta, Eiji Ikeda and Hirofumi Nakata, Nikko Materials.
10d	Base Layer Band Gap Engineering for III-V Bipolar Devices	Abstract
	P. M. DeLuca, C. R. Lutz, B. E. Landini, M. Chaplin, K. S. Stevens and R. E. Welser, Kopin Corporation
10e	High Volume Manufacturing of InGaP/GaAs HBT Wafers	Abstract
	J. Silver, P. Cooke, E. Armour, S. Ting, L. Kapitan, M. Ferreira, D. Tilli, C. Palmer, Emcore Electronic Materials
11a	Introduction of Complete Sputtering Metallization in Conjunction with Dry CO2 Snow Lift-Off for High Volume GaAs Manufacturing	Abstract
	Fabian Radulescu, Paul Miller, Liam Cunnane, Mark Harris, Hien Lam, Charles Bowers, TriQuint Semiconductor & Trikon Technologies & eco Snow Systems.
11b	Methods for Monitoring Passivation Ledges in a Manufacturing Environment	Abstract
	P.J. Zampardi, Lance Rushing, Pingxi Ma, and M.F. Chang, Conexant Systems & UCLA
11c	Film Stress versus Plating Rate for Pulse-Plated Gold	Abstract
	P.H. Lawyer and C.H. Fields, HRL Laboratories
11d	Low Cost, High Throughput Hot Plate Track System Used in 150 mm GaAs Ohmic Metal Alloying	Abstract
	Moreen Minkoff, Fabian Radulescu, Brad Avrit & Dong Nguyen, TriQuint Semiconductors & C&D Semiconductor Services
11e	Design of Experiments to Achieve High Yield Manufacturing at 6-inch Foundry	Abstract
	H.C. Chou, M.C. Liao, J.L. Hsu, L.S. Yip, Y.S. Wu, J.C. Chang, Y.C. Wang, C.G. Yuan, L.J. Meng, W.H. Chu, T.C. Lee, C.B. Ho, P. Chen, J.M. Lee, P.C. Chao, and C.S. Wu, WIN Semiconductors Corporation
12a	Manufacturing Technology of InGaP HBT Power Amplifiers for Cellular Phone Applications	Abstract
	R. Hattori, S. Suzuki, Y. Yamamoto, S. Miyakuni, N. Ogawa, T. Oku, H. Seki and T. Shimura, Mitsubishi Electric Corp.
12b	GaAs Components for 60 GHz Wireless Communication Applications	Abstract
	Mansoor Siddiqui, Manny Quijije, Al Lawrence, Brian Pitman, Richard Katz, Phu Tran, Alex Chau, Deborah Davison, Salah Din, Richard Lai and Dwight Streit, Velocium
12c	High Yield InGaP HBT Manufacturing Technology on 150-mm GaAs Wafers	Abstract
	Y.C. Wang, H.C. Chou, T.C. Tsai, M.C. Tu, Y.J. Chen, P.C. Chao, C. H. Chen, S. M. Liu and C.S. Wu, WIN Semiconductors Corporation
12d	Development of Motorola's InGaP HBT Process	Abstract
	Mariam Sadaka, Darrell Hill, Fred Clayton, Haldane Henry, Colby Rampley, Jon Abrokwah and Ric Uscola, Motorola
12e	Sub-Micron Scaling of High-Speed InP/InGaAs SHBTs Grown by MOCVD using Carbon as the p-Type Dopant	Abstract
	M.L. Hattendorf, Q.J. Hartmann, K. Richards, M. Feng, University of Illinois & Epiworks
13a	A Comparative Study of DC and Microwave Characteristics of Lattice-matched InP HBTs and Metamorphic HBTs Grown by MBE	Abstract
	J.M. Fastenau, A.B. Cornfeld, W.K. Liu, H. Yang, H. Wang, K. Radhakrishnan, J. C. M. Hwang. IQE Inc, Nanyang Technological University & Lehigh University
13b	6-inch MOVPE Metamorphic HBT with Low Indium Compsition InGaAs base and collector for High Power Application	Abstract
	Y. Otoki, T. Tsuji, N. Sato, T. Tanaka, H. Kamogawa and Y. Sasaki, Hitachi Cable
13c	Potential of Metamorphic HEMT with 0.25um Refractory Metal Gate for Power Application in Ka-Band	Abstract
	F. Benkhelifa, R. Quay, R. Lösch, K. Schäuble, M. Dammann, M. Mikulla, G. Weimann, Fraunhofer Institute for Applied Solid State Physics
13d	GaAs-Based Metamorphic Technology	Abstract
	R. E. Leoni III, W. E. Hoke, C. S. Whelan, P. F. Marsh, P. C. Balas II, J. G. Hunt, K. C. Hwang, S. M. Lardizabal, C. Laighton, S. J. Lichwala, Y. Zhang, and T. E. Kazior, Raytheon RF Components
13e	GaAs-Based Heterostructures on Silicon	Abstract
	Z. Yu, R. Droopad, D. Jordan, J. Curless, Y. Liang, C. Overgaard, H. Li, A. Talin, T. Eschrich, B. Craigo, K. Eisenbeiser, R. Emrick, J. Finder,
	X. Hu, Y. Wei, J. Edwards, Jr., D. Convey, K. Moore, D. Marshall, J. Ramdani, L. Tisinger, W. Ooms, M. O’Steen, F. Towner, T. Hierl, Motorola & IQE

GaAs ManTech On-Line Digest Search

The International Conference on Compound Semiconductor Manufacturing Technology "Sharing Ideas Throughout the Industry" 2002 On-line Digest Table of Contents

Order everything you need with our convenient on-line order form or contact Margaret Doyle at mdoyle@gaasmantech.org

The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2002 On-line Digest Table of Contents

Order everything you need with our convenient on-line order form
or contact Margaret Doyle at mdoyle@gaasmantech.org