InAlAs/GaAsSb/InP DHBTs grown by Production
MBE
H.J. Zhu, J.M. Kuo, P. Pinsukanjana, X.J. Jin, K. Vargason, M. Herrera, D. Ontiveros, C. Boehme, and Y.C. Kao
Intelligent
Expitaxy Technology, Inc.,
E-mail: zhu@intelliEPI.com, Phone: 972-234-0068 x228
Keywords: InP, GaAsSb, DHBT, MBE, multi-wafer production, in-situ sensors
Abstract
We investigate the growth of GaAsSb base DHBTs with InAlAs emitter. The epi materials are grown using 4 x 4” multi-wafer production MBE system fully equipped with real-time in-situ sensors such as absorption band edge spectroscopy (ABES) and optical-based flux monitor (OFM). State-of-the-art hole mobilities are obtained from 100 nm thick carbon-doped GaAsSb. Sb composition variation of less that + 0.1 atomic percentage across a 4 x 4” platen configuration has been achieved. Large area InAlAs/GaAsSb/InP DHBT device with excellent DC characteristics such as BVCEO>6 V, and DC current gain of 45 at 1kA/cm2 are obtained with 40 nm thick GaAsSb base at 4.5e19cm-3 doping. These results demonstrate the feasibility of multi-wafer MBE for mass production of GaAsSb based HBTs